Hosted in Fukuoka, Japan

https://icns14.jp/

Silanna UV has been invited to present a talk on the Si-doping characteristics of GaN/AlN SPSL structures used in Silanna UV’s far UVC LEDs.

It is with great pride that Silanna UV announces its participation in the upcoming 14^th International Conference on Nitride Semiconductors (ICNS-14) in Fukuoka Japan. The conference, which runs from November 12^th to 17^th, will present high-impact scientific and technological advances in materials and devices based on group-III nitride semiconductors, and feature plenary sessions, parallel topical sessions, poster sessions and an industrial exhibition. ICNS-14 will begin with an introductory plenary session in which the current status and trends of nitride material research and device development will be reviewed, setting a basis for the discussions over the course of the conference. The following parallel topical sessions will provide opportunities for in-depth discussions via a vigorous program of invited/contributed talks and poster presentations covering the latest results on nitrides, including material processing, physics, devices, theory, and novel ideas.

Silanna UV is set to discuss the Si-doping characteristics of GaN/AlN SPSL structures used in their far UVC LEDs. Far UVC has emerged as a promising solution for safe, effective, and contactless disinfection. The efficacy of sub-240 nm LEDs in deactivating a wide array of pathogens has made them particularly intriguing. Importantly, their utilisation in inhabited spaces has proven to be safer than longer UVC wavelengths.